| PART |
Description |
Maker |
| M74DW66500B |
2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
|
ST Microelectronics
|
| LH28F640SP LHF64P01 |
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| W28F641B W28F641BB80L W28F641BT80L W28F641TB80L W2 |
From old datasheet system
64MBIT (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond
|
| UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 U |
C; Package/Case:16-SO; Supply Voltage Max:3.6V; Page/Burst Read Access:1.4ms
Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| HY57V641620LTP HY57V641620STP |
Synchronous DRAM Memory 64Mbit
|
Hynix
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| MR27V6452D |
64Mbit Electrically Programmable Read-Only Memory With Page Mode.(4M字6位或8位M字位一次性可编程ROM 64兆比特电可编程只读页面模式。（4分字× 16位或8位M字8位一次性可编程ROM的字记忆体）
|
OKI SEMICONDUCTOR CO., LTD.
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列
EIGHT DARLINGTON ARRAYS
|
STMicroelectronics N.V.
Allegro MicroSystems
STMICROELECTRONICS[STMicroelectronics]
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 |
4MEG (524288words x 8bit) flash memory
4 MEG (524288 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
